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STGB20N40LZ 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGB20N40LZ
功能描述  Low saturation voltage
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGB20N40LZ 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
June 2014
DocID024251 Rev 5
1/20
STGB20N40LZ,
STGD20N40LZ
Automotive-grade 390 V internally clamped IGBT
ESCIS 300 mJ
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most
advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gate-
emitter provide overvoltage protection
capabilities. The device also exhibits low on-state
voltage drop and low threshold drive for use in
automotive ignition systems.
D2PAK
DPAK
1
3
TAB
1
3
TAB
C (2 or TAB)
E (3)
G (1)
RG
RGE
SC30180
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STGB20N40LZ
GB20N40LZ
D2PAK
Tape and reel
STGD20N40LZ
GD20N40LZ
DPAK
Tape and reel
www.st.com


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