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STGP7H60DF 数据表(PDF) 3 Page - STMicroelectronics |
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STGP7H60DF 数据表(HTML) 3 Page - STMicroelectronics |
3 / 25 page DocID027555 Rev 2 3/25 STGB7H60DF, STGF7H60DF, STGP7H60DF Electrical ratings 25 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter TO-220 D²PAK TO-220FP Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 14 14(1) 1. Limited by maximum junction temperature. A Continuous collector current at TC = 100 °C 7 7(1) ICP (2) 2. Pulse width limited by maximum junction temperature. Pulsed collector current 28 28(1) A VGE Gate-emitter voltage ±20 V IF Continuous forward current TC = 25 °C 14 14(1) A Continuous forward current at TC = 100 °C 7 7(1) IFP (2) Pulsed forward current 28 28(1) A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2500 V PTOT Total dissipation at TC = 25 °C 88 24 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 Table 3. Thermal data Symbol Parameter TO-220 D²PAK TO-220FP Unit RthJC Thermal resistance junction-case IGBT 1.7 6.2 °C/W RthJC Thermal resistance junction-case diode 2.8 6.25 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W |
类似零件编号 - STGP7H60DF |
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类似说明 - STGP7H60DF |
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