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STGD3HF60HDT4 数据表(PDF) 4 Page - STMicroelectronics |
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STGD3HF60HDT4 数据表(HTML) 4 Page - STMicroelectronics |
4 / 26 page Electrical characteristics STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4/26 DocID17690 Rev 5 2 Electrical characteristics (Tj=25 °C unless otherwise specified). Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 0.5 A, Tj = 125 °C 1.4 V VGE = 15 V, IC = 1.5 A 2.45 2.95 VGE = 15 V, IC = 1.5 A, Tj = 125 °C 1.85 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 250 µA VCE = 600 V, Tj = 125 °C 1 mA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ± 100 nA gfs Forward transconductance VCE = 15 V, IC = 1.5 A 1.5 S Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 152 - pF Coes Output capacitance - 14 - pF Cres Reverse transfer capacitance - 3 - pF Qg Total gate charge VCE = 480 V, IC = 1.5 A, VGE = 15 V (see Figure 18: " Gate charge test circuit") - 12 - nC Qge Gate-emitter charge - 2 - nC Qgc Gate-collector charge - 6 - nC |
类似零件编号 - STGD3HF60HDT4 |
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类似说明 - STGD3HF60HDT4 |
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