SI6463BDQ datasheet(2/5 Pages) VISHAY

部件名	SI6463BDQ

功能描述	P-Channel 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Si6463BDQ

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72018

S-21782—Rev. A, 07-Oct-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

-0.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -16 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -16 V, VGS = 0 V, TJ = 70_C

-10

mA

On-State Drain Currenta

ID(on)

VDS -5 V, VGS = -4.5 V

20

A

VGS = -4.5 V, ID = -7.4 A

0.011

0.015

W

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -6.3 A

0.015

0.020

W

DS(on)

VGS = -1.8 V, ID = -5.5 A

0.020

0.027

W

Forward Transconductancea

gfs

VDS = -15 V, ID = -7.4 A

34

S

Diode Forward Voltagea

VSD

IS = -1.3 A, VGS = 0 V

-0.64

-1.1

V

Dynamicb

Total Gate Charge

Qg

40

60

Gate-Source Charge

Qgs

VDS = -10 V, VGS = -5 V, ID = -7.4 A

5.2

nC

Gate-Drain Charge

Qgd

8

Turn-On Delay Time

td(on)

35

55

Rise Time

tr

VDD = -10 V, RL = 15 W

40

60

Turn-Off Delay Time

td(off)

VDD = -10 V, RL = 15 W

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

190

300

ns

Fall Time

tf

90

150

Source-Drain Reverse Recovery Time

trr

IF = -1.3 A, di/dt = 100 A/ms

75

120

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

0

6

12

18

24

30

0

1234

5

VGS = 5 thru 2 V

TC = 125_C

-55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

类似零件编号 - SI6463BDQ

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI6463BDQ	199Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
Vishay Siliconix	SI6463BDQ	199Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05

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类似说明 - SI6463BDQ

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