SI4539ADY-T1 datasheet(1/7 Pages) VISHAY

部件名	SI4539ADY-T1

功能描述	N- and P-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si4539ADY

Vishay Siliconix

Document Number: 71131

S-03951—Rev. B, 26-May-03

www.vishay.com

2-1

N- and P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

N-Channel

30

0.036 @ VGS = 10 V

5.9

N-Channel

30

0.053 @ VGS = 4.5 V

4.9

P Channel

30

0.053 @ VGS = - 10 V

- 4.9

P-Channel

-30

0.090 @ VGS = - 4.5 V

- 3.7

D1

G1

S1

N-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4539ADY

Si4539ADY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

Parameter

Symbol

10 secs

Steady State

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

5.9

4.4

- 4.9

- 3.7

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

4.7

3.6

- 3.9

- 2.9

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)a

IS

1.7

0.9

- 1.7

- 0.9

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.1

2

1.1

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

0.7

1.3

0.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

Typ

Max

Typ

Max

Unit

Mi

J

ti

t A bi

ta

t

v 10 sec

R

50

62.5

52

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

90

110

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

32

40

32

40

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

类似零件编号 - SI4539ADY-T1

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI4539ADY-T1-GE3	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET

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类似说明 - SI4539ADY-T1

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