STFI20NM65N datasheet(5/12 Pages) STMICROELECTRONICS

部件名	STFI20NM65N

功能描述	N-channel 650 V, 15 A, 0.250 廓 typ., MDmesh??II Power MOSFET in a I짼PAKFP package

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STFI20NM65N

Electrical characteristics

12

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source drain current

-

15

A

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source drain current

(pulsed)

-60

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5 %.

Forward on voltage

I

SD

= 15 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 15 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 15)

-455

ns

Q

rr

Reverse recovery charge

-

5.5

μC

I

RRM

Reverse recovery current

-

24.5

A

t

rr

Reverse recovery time

I

SD

=15 A, di/dt = 100 A/μs

V

DD

= 60 V, Tj = 150 °C

(see

Figure 15)

-710

ns

Q

rr

Reverse recovery charge

-

8

μC

I

RRM

Reverse recovery current

-

24

A

类似零件编号 - STFI20NM65N

制造商	部件名	数据表	功能描述
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STFI20NM65N 数据表(PDF) 5 Page - STMicroelectronics

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