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SI2316DS 数据表(PDF) 1 Page - Vishay Siliconix |
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SI2316DS 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Battery Switch Si2316DS Vishay Siliconix New Product Document Number: 71798 S-05481—Rev. A, 21-Jan-02 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 30 0.085 @ VGS = 4.5 V 2.6 G S D Top View 2 3 TO-236 (SOT-23) 1 Si2316DS (C6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 V _ TA= 25_C 3.4 2.9 Continuous Drain Current (TJ = 150_C)a, b TA= 70_C ID 2.7 2.3 Pulsed Drain Currentb IDM 16 A Continuous Source Current (Diode Conduction)a, b IS 0.8 TA= 25_C 0.96 0.7 Power Dissipationa, b TA= 70_C PD 0.6 0.45 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 5 sec 100 130 Maximum Junction-to-Ambienta Steady State RthJA 140 175 _C/W Maximum Junction-to-Foot (drain) Steady State RthJF 60 75 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
类似零件编号 - SI2316DS |
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类似说明 - SI2316DS |
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