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STD35N3LH5 数据表(PDF) 4 Page - STMicroelectronics |
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STD35N3LH5 数据表(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STD35N3LH5 4/15 Doc ID 16359 Rev 2 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 2.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 15 A VGS= 4.5 V, ID= 15 A 12.5 18 16 20 m Ω m Ω Table 6. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 27.5 V, f=1 MHz, VGS=0 - 713 135 22 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 15 V, ID = 19 A VGS = 4.5 V Figure 14 - 5.4 2 2.1 - nC nC nC RG Intrinsic gate resistance f = 1 MHz open drain - 3.3 - Ω |
类似零件编号 - STD35N3LH5 |
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类似说明 - STD35N3LH5 |
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