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BTA10 数据表(PDF) 2 Page - STMicroelectronics

部件名 BTA10
功能描述  10 A SnubberlessTM, logic level and standard Triacs
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BTA10 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
BTA10, BTB10, T10xx
2/14
DocID2937 Rev 7
1
Characteristics
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine
wave)
TO-220AB
Tc = 105 °C
10
A
TO-220AB Ins.
Tc = 95 °C
ITSM
Non repetitive surge peak on-
state current (full cycle, Tj initial
= 25 °C)
F = 50 Hz
tp = 20 ms
100
A
F = 60 Hz
tp = 16.7 ms
105
I2t
I2t value for fusing
tp = 10 ms
55
A2s
dl/dt
Critical rate of rise of on-state
current
IG = 2 x IGT , tr
≤ 100 ns
F = 120 Hz
Tj = 125 °C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-
state voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +125
°C
Table 3: Static electrical characteristics
Symbol
Test Conditions
Tj
Value
Unit
VT(1)
ITM = 14 A, tp = 380 µs
25 °C
Max.
1.55
V
VTO
threshold on-state voltage
125 °C
Max.
0.85
V
RD
Dynamic resistance
125 °C
Max.
40
IDRM/IRRM
VDRM = VRRM
25 °C
Max.
5
µA
125 °C
1
mA
Notes:
(1)For both polarities of A2 referenced to A1


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