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BTA10 数据表(PDF) 2 Page - STMicroelectronics |
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BTA10 数据表(HTML) 2 Page - STMicroelectronics |
2 / 14 page Characteristics BTA10, BTB10, T10xx 2/14 DocID2937 Rev 7 1 Characteristics Table 2: Absolute maximum ratings Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 105 °C 10 A TO-220AB Ins. Tc = 95 °C ITSM Non repetitive surge peak on- state current (full cycle, Tj initial = 25 °C) F = 50 Hz tp = 20 ms 100 A F = 60 Hz tp = 16.7 ms 105 I2t I2t value for fusing tp = 10 ms 55 A2s dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125 °C 50 A/µs VDSM/VRSM Non repetitive surge peak off- state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C Table 3: Static electrical characteristics Symbol Test Conditions Tj Value Unit VT(1) ITM = 14 A, tp = 380 µs 25 °C Max. 1.55 V VTO threshold on-state voltage 125 °C Max. 0.85 V RD Dynamic resistance 125 °C Max. 40 mΩ IDRM/IRRM VDRM = VRRM 25 °C Max. 5 µA 125 °C 1 mA Notes: (1)For both polarities of A2 referenced to A1 |
类似零件编号 - BTA10 |
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类似说明 - BTA10 |
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