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2SC2412 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2412 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SC2412 C020 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.4 V Collector output capacitance Cob VCB=12V,IE=0A, f=1MHz 2.0 3.5 pF Transition frequency fT VCE=12V, IE= -2mA f=100MHz 180 MHz CLASSIFICATION OF hFE(1) Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS |
类似零件编号 - 2SC2412_13 |
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类似说明 - 2SC2412_13 |
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