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STF12N50M2 数据表(PDF) 5 Page - STMicroelectronics |
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STF12N50M2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 13 page DocID026515 Rev 1 5/13 STF12N50M2 Electrical characteristics 13 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 250 V, I D = 5 A, R G = 4.7 Ω , V GS = 10 V (see Figure 14 and 19) - 13.5 - ns t r Rise time - 10.5 - ns t d(off) Turn-off delay time - 8 - ns t f Fall time - 34.5 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 10 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 40 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage V GS = 0, I SD = 10 A - 1.6 V t rr Reverse recovery time I SD = 10 A, di/dt = 100 A/μs V DD = 60 V (see Figure 16) -276 ns Q rr Reverse recovery charge - 2.4 μC I RRM Reverse recovery current - 17.5 A t rr Reverse recovery time I SD = 10 A, di/dt = 100 A/μs V DD = 60 V, T j =150 °C (see Figure 16) -376 ns Q rr Reverse recovery charge - 3.4 μC I RRM Reverse recovery current - 18.3 A |
类似零件编号 - STF12N50M2 |
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类似说明 - STF12N50M2 |
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