STF11N65K3 datasheet(7/13 Pages) STMICROELECTRONICS

部件名	STF11N65K3

功能描述	Gate charge minimized

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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7 / 13 page

STF11N65K3

Electrical characteristics

Doc ID 17931 Rev 2

7/13

Figure 8.

Output capacitance stored energy

Figure 9.

Capacitance variations

Figure 10.

Gate charge vs gate-source

voltage

Figure 11.

Normalized on resistance vs

temperature

Figure 12.

Normalized gate threshold voltage

vs temperature

Figure 13.

Maximum avalanche energy vs

temperature

Eoss

3

2

1

0

100

VDS(V)

(µJ)

400

4

200

300

5

6

500

600

7

8

AM03929v1

C

1000

100

10

1

0.1

10

VDS(V)

(pF)

1

100

Ciss

Coss

Crss

AM03928v1

VGS

6

4

2

0

10

Qg(nC)

(V)

40

8

20

30

10

VDD=520V

ID=7A

50

12

300

200

100

0

400

500

VDS

VGS

AM03927v1

RDS(on)

2.0

1.5

1.0

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100 125 150

2.5

0.0

AM03931v1

VDS = 10V

ID = 3.6A

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25 50

100 125 150

AM03930v1

ID = 100µA

EAS

0

40

TJ(°C)

(mJ)

20

100

60

80

0

20

40

60

80

120 140

100

120

140

160

180

200

220

ID=7.2 A

VDD=50 V

AM03933v1

Obsolete

Product(s)

- Obsolete

Product(s)

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