STF10N105K5 datasheet(5/18 Pages) STMICROELECTRONICS

部件名	STF10N105K5

功能描述	Ultra low gate charge

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 18 page

STF10N105K5, STP10N105K5, STW10N105K5

Electrical characteristics

DocID026932 Rev 2

5/18

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

6

A

ISDM

(1)

Source-drain current (pulsed)

24

A

VSD

(2)

Forward on voltage

ISD = 6 A, VGS = 0

1.5

V

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs

VDD = 60 V

345

ns

Qrr

Reverse recovery charge

3.53

µC

IRRM

Reverse recovery current

20.5

A

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs

VDD = 60 V TJ = 150 °C

540

ns

Qrr

Reverse recovery charge

5.05

µC

IRRM

Reverse recovery current

18.5

A

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1 mA, ID = 0

30

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.

类似零件编号 - STF10N105K5

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类似说明 - STF10N105K5

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