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STF7N105K5 数据表(PDF) 5 Page - STMicroelectronics |
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STF7N105K5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 14 page STF7N105K5 Electrical characteristics DocID026184 Rev 2 5/14 Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 525 V, ID = 2 A, RG =4.7 Ω, VGS=10 V (see Figure 15: "Test circuit for resistive load switching times" and Figure 20: "Switching time waveform") - 17.5 - ns tr Rise time - 7 - ns td(off) Turn-off delay time - 43 - ns tf Fall time - 25 - ns Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4 A ISDM Source-drain current (pulsed) 16 A VSD(1) Forward on voltage ISD= 4 A, VGS=0 - 1.6 V trr Reverse recovery time ISD= 4 A, VDD= 60 V di/dt = 100 A/µs, Figure 17: "Test circuit for inductive load switching and diode recovery times" - 370 ns Qrr Reverse recovery charge - 3 µC IRRM Reverse recovery current - 16.5 A trr Reverse recovery time ISD= 4 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C Figure 17: "Test circuit for inductive load switching and diode recovery times" - 600 ns Qrr Reverse recovery charge - 4.4 µC IRRM Reverse recovery current - 14.5 A Notes: (1)Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8: Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost- effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. |
类似零件编号 - STF7N105K5 |
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类似说明 - STF7N105K5 |
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