STDLED656 datasheet(3/22 Pages) STMICROELECTRONICS

部件名	STDLED656

功能描述	Gate charge minimized

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 22 page

DocID024429 Rev 1

3/22

STDLED656, STFILED656, STPLED656, STULED656

Electrical ratings

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK, TO-220

IPAK

I2PAKFP

VDS

Drain- source voltage

650

V

VGS

Gate- source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

6.0

6.0(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

3.3

3.3(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

24.0

24.0(1)

A

PTOT

Total dissipation at TC = 25 °C

30

110

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

5.4

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

2.5

kV

ESD

Gate-source human body model (C=100

pF, R=1.5 k

Ω)

dv/dt(3)

3.

ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

12

V/ns

VISO

Insulation withstand voltage (AC)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

TJ

Operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

I²PAKFP

TO-220

IPAK

Rthj-case Thermal resistance junction-case max.

4.17

-

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

-

100

°C/W

Rthj-pcb

Thermal resistance junction-pcb max.

50

-

°C/W

Obsolete

Product(s)

- Obsolete

Product(s)

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类似说明 - STDLED656

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