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STP9N60M2 数据表(PDF) 3 Page - STMicroelectronics |
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STP9N60M2 数据表(HTML) 3 Page - STMicroelectronics |
3 / 21 page DocID024399 Rev 2 3/21 STD9N60M2, STP9N60M2, STU9N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 °C 5.5 A I D Drain current (continuous) at T C = 100 °C 3.6 A I DM (1) 1. Pulse width limited by safe operating area.. Drain current (pulsed) 22 A P TOT Total dissipation at T C = 25 °C 60 W dv/dt (2) 2. I SD ≤ 5.5 A, di/dt ≤ 400 A/μs; V DS peak < V (BR)DSS , V DD =400 V Peak diode recovery voltage slope 15 V/ns dv/dt (3) 3. V DS ≤ 480 V MOSFET dv/dt ruggedness 50 T stg Storage temperature - 55 to 150 °C T j Max. operating junction temperature 150 Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220 IPAK R thj-case Thermal resistance junction-case max 2.08 °C/W R thj-pcb Thermal resistance junction-pcb max (1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board 50 °C/W R thj-amb Thermal resistance junction-ambient max 100 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetetive or not repetetive (pulse width limited by T jmax ) 2A E AS Single pulse avalanche energy (starting T j =25°C, I D = I AR ; V DD =50) 105 mJ |
类似零件编号 - STP9N60M2 |
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类似说明 - STP9N60M2 |
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