数据搜索系统,热门电子元器件搜索 |
|
STU1HN60K3 数据表(PDF) 3 Page - STMicroelectronics |
|
STU1HN60K3 数据表(HTML) 3 Page - STMicroelectronics |
3 / 19 page DocID024422 Rev 1 3/19 STD1HN60K3, STU1HN60K3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain- source voltage 600 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 1.2(1) 1. Pulse width limited by safe operating area A ID Drain current (continuous) at TC = 100 °C 0.76 A IDM (1) Drain current (pulsed) 4.8 A PTOT Total dissipation at TC = 25 °C 27 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by TJ max) 1.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 60 mJ dv/dt(2) 2. ISD ≤ 1.2 A, di/dt ≤ 400 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 5 V/ns TJ Operating junction temperature -55 to 150 °C Tstg Storage temperature °C Table 3. Thermal data Symbol Parameter Value Unit DPAK IPAK Rthj-case Thermal resistance junction-case max. 4.63 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W Rthj-pcb Thermal resistance junction-pcb max. 50 °C/W |
类似零件编号 - STU1HN60K3 |
|
类似说明 - STU1HN60K3 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |