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STB18N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STB18N60M2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is information on a product in full production. February 2014 DocID024735 Rev 2 1/21 STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 , TAB TO-220 TO-247 D PAK 1 2 3 TAB 1 2 3 2 1 3 TAB Order codes VDS @ TJmax RDS(on) max ID STB18N60M2 650 V 0.28 Ω 13 A STP18N60M2 STW18N60M2 Table 1. Device summary Order codes Marking Package Packaging STB18N60M2 18N60M2 D 2 PAK Tape and reel STP18N60M2 TO-220 Tube STW18N60M2 TO-247 www.st.com |
类似零件编号 - STB18N60M2 |
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类似说明 - STB18N60M2 |
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