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STBR3012 数据表(PDF) 3 Page - STMicroelectronics |
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STBR3012 数据表(HTML) 3 Page - STMicroelectronics |
3 / 8 page STBR3012 Characteristics DocID029963 Rev 1 3/8 1.1 Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current Figure 2: Forward voltage drop versus forward current (typical values) Figure 3: Forward voltage drop versus forward current (maximum values) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration Figure 5: Junction capacitance versus reverse voltage applied (typical values) 0 10 20 30 40 50 0 5 10 15 20 25 30 35 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T = tp /T tp δ P(W) IF(AV)(A) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.0 0.5 1.0 1.5 2.0 T j = 150 °C T j = 25 °C IFM(A) VFM(V) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.0 0.5 1.0 1.5 2.0 2.5 T j = 150 °C T j = 25 °C VFM(V) IFM(A) 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 1,E-03 1,E-02 1,E-01 1,E+00 tP(s) Single pulse Zth(j-c) /Rth(j-c) 10 100 1000 1 10 100 1000 10000 VR(V) C(pF) F = 1 MHz V osc = 30 mVRMS T j = 25 °C |
类似零件编号 - STBR3012 |
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类似说明 - STBR3012 |
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