2SD1766 datasheet(2/4 Pages) BILIN

部件名	2SD1766

功能描述	NPN Silicon Epitaxial Planar Transistor

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制造商	BILIN [Galaxy Semi-Conductor Holdings Limited]

网页	http://www.galaxycn.com

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2 / 4 page

Production specification

NPN Silicon Epitaxial Planar Transistor

2SD1766

E018

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO

IC=1mA,IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=20V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

1

μA

DC current gain

hFE

VCE=3V,IC=500mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=200mA

0.5

0.8

V

Transition frequency

fT

VCE=5V, IE=50mA，

f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

MARKING

DBP

DBQ

DBR

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