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SI6465DQ 数据表(PDF) 1 Page - Vishay Siliconix |
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SI6465DQ 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Vishay Siliconix Si6465DQ Document Number: 70812 S-80682-Rev. D, 31-Mar-08 www.vishay.com 1 P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 8 0.012 at VGS = - 4.5 V ± 8.8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 Si6465DQ D S S G 1 2 3 4 8 7 6 5 D S S D TSSOP-8 Top View Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S* G D * Source Pins 2, 3, 6 and 7 must be tied common P-Channel MOSFET Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a, b TA = 25 °C ID ± 8.8 A TA = 70 °C ± 7.1 Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a, b IS - 1.5 Maximum Power Dissipationa, b TA = 25 °C PD 1.5 W TA = 70 °C 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 83 °C/W Steady State 90 RoHS COMPLIANT |
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