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SI7784DP 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SI7784DP
功能描述  N-Channel 30-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI7784DP 数据表(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7784DP
New Product
Document Number: 68795
S-82115-Rev. B, 08-Sep-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
Synchronous Rectification
DC/DC
- High-Side Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a, g
Qg (Typ.)
30
0.006 at VGS = 10 V
35g
13.7 nC
0.0082 at VGS = 4.5 V
35g
Ordering Information: Si7784DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK® SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
35g
A
TC = 70 °C
35g
TA = 25 °C
21.5b, c
TA = 70 °C
17.2b, c
Pulsed Drain Current
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
IS
35g
TA = 25 °C
4.5b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Single Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
27.7
W
TC = 70 °C
17.7
TA = 25 °C
5.0b, c
TA = 70 °C
3.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
20
25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.4
4.5
RoHS
COMPLIANT


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