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SI7674DP 数据表(PDF) 4 Page - Vishay Siliconix |
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SI7674DP 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73562 S110212-Rev. C, 14-Feb-11 Vishay Siliconix Si7674DP TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 1 10 100 0.1 0.01 0.001 - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 01 23 45 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 120 200 40 80 Time (s) 160 110 0.1 0.01 0.001 Safe Operating Area, Junction-to-Ambient 100 1 0.01 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 ms 10 ms 100 ms DC 1 s 10 s 0.1 Limited by RDS(on)* |
类似零件编号 - SI7674DP |
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类似说明 - SI7674DP |
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