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IRFD9024 数据表(PDF) 7 Page - Vishay Siliconix |
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IRFD9024 数据表(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 91137 www.vishay.com S10-2463-Rev. C, 08-Nov-10 7 IRFD9024, SiHFD9024 Vishay Siliconix Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91137. P.W. Period dI/dt Diode recovery dV/dt Body diode forward drop Body diode forward current Driver gate drive Inductor current D = P.W. Period + - - + Peak Diode Recovery dV/dt Test Circuit • dV/dt controlled by R g • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer R g • Compliment N-Channel of D.U.T. for driver V DD • I SD controlled by duty factor “D” Note Note a. V GS = - 5 V for logic level and - 3 V drive devices V GS = - 10 V a D.U.T. l SD waveform D.U.T. V DS waveform V DD Re-applied voltage Ripple ≤ 5 % I SD Reverse recovery current |
类似零件编号 - IRFD9024 |
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类似说明 - IRFD9024 |
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