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SI8473EDB 数据表(PDF) 2 Page - Vishay Siliconix |
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SI8473EDB 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 12 page Si8473EDB www.vishay.com Vishay Siliconix S15-1692-Rev. D, 20-Jul-15 2 Document Number: 65037 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Maximum under steady state conditions is 85 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient a, b t = 5 s RthJA 35 45 °C/W Maximum Junction-to-Ambient c, d t = 5 s RthJA 85 110 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -20 - - V VDS Temperature Coefficient V DS/TJ ID = -250 μA --14 - mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ -3.4 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -0.6 - -1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V - - ± 5 μA VDS = 0 V, VGS = ± 12 V - - ± 1 mA Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V - - -1 μA VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -10 On-State Drain Current a ID(on) VDS -5 V, VGS = -4.5 V -5 - - A Drain-Source On-State Resistance a RDS(on) VGS = -4.5 V, ID = -1 A - 0.034 0.041 VGS = -2.5 V, ID = -1 A - 0.046 0.055 Forward Transconductance a gfs VDS = -10 V, ID = -1 A - 11 - S Dynamic b Gate Resistance Rg VGS = -0.1 V, f = 1 MHz - 3.6 - k Turn-On Delay Time td(on) VDD = -10 V, RL = 10 ID -1 A, VGEN = -4.5 V, Rg = 1 -15 25 μs Rise Time tr -50 75 Turn-Off Delay Time td(off) -55 85 Fall Time tf - 100 150 Turn-On Delay Time td(on) VDD = -10 V, RL = 10 ID -1 A, VGEN = -10 V, Rg = 1 -7 15 Rise Time tr -18 30 Turn-Off Delay Time td(off) - 155 235 Fall Time tf - 110 165 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TA = 25 °C - - -2.3 c A Pulse Diode Forward Current ISM -- - -25 Body Diode Voltage VSD IS = -1 A, VGS = 0 V - -0.85 -1.2 V Body Diode Reverse Recovery Time trr IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C -30 60 ns Body Diode Reverse Recovery Charge Qrr -17 35 nC Reverse Recovery Fall Time ta -13- ns Reverse Recovery Rise Time tb -17- |
类似零件编号 - SI8473EDB |
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类似说明 - SI8473EDB |
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