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SI8465DB 数据表(PDF) 2 Page - Vishay Siliconix |
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SI8465DB 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  www.vishay.com 2 Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 Vishay Siliconix Si8465DB Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t = 10 s RthJA 55 70 °C/W Maximum Junction-to-Ambientc, d t = 10 s 125 160 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 12 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 2.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1.5 A 0.086 0.104 Ω VGS = - 2.5 V, ID = - 1.5 A 0.122 0.148 Forward Transconductancea gfs VDS = - 10 V, ID = - 1.5 A 7 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 450 pF Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 95 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 1 A 12 18 nC VDS = - 10 V, VGS = - 4.5 V, ID = 1 A 69 Gate-Source Charge Qgs 0.85 Gate-Drain Charge Qgd 2.2 Gate Resistance Rg VGS = - 0.1 V, f = 1 MHz 7.5 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 25 40 Fall Time tf 10 15 Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 715 Rise Time tr 10 15 Turn-Off Delay Time td(off) 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TA = 25 °C - 1.5 A Pulse Diode Forward Current ISM - 15 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 10 |
类似零件编号 - SI8465DB |
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类似说明 - SI8465DB |
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