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SI4686DY 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4686DY 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 Vishay Siliconix Si4686DY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 31.3 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 13.8 A 0.0078 0.0095 Ω VGS = 4.5 V, ID = 11.4 A 0.011 0.014 Forward Transconductancea gfs VDS = 15 V, ID = 13.8 A 56 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1220 pF Output Capacitance Coss 230 Reverse Transfer Capacitance Crss 98 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 13.8 A 17 26 nC VDS = 15 V, VGS = 5 V, ID = 13.8 A 9.2 14 Gate-Source Charge Qgs 4.1 Gate-Drain Charge Qgd 2.8 Gate Resistance Rg f = 1 MHz 0.8 1.2 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 20 30 Fall Time tf 815 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 13 20 Rise Time tr 16 25 Turn-Off Delay Time td(off) 23 35 Fall Time tf 815 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.3 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2.6 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C 25 50 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta 12.5 ns Reverse Recovery Rise Time tb 12.5 |
类似零件编号 - SI4686DY |
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类似说明 - SI4686DY |
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