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SI4491EDY 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4491EDY 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 Vishay Siliconix Si4491EDY New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 24 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.2 - 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 150 µA VDS = 0 V, VGS = ± 20 V ± 15 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS - 10 V, ID = - 13 A 0.0054 0.0065 VGS - 6 V, ID = - 10 A 0.0068 0.0082 VGS - 4.5 V, ID = - 8 A 0.0093 0.0112 Forward Transconductancea gfs VDS = - 15 V, ID = - 13 A 44 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 4620 pF Output Capacitance Coss 880 Reverse Transfer Capacitance Crss 820 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A 102 153 nC VDS = - 15 V, VGS = - 5 V, ID = - 17.3 A 66 80 Gate-Source Charge Qgs 16 Gate-Drain Charge Qgd 28 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Turn-On Delay Time td(on) VDD = 0 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 70 105 ns Rise Time tr 70 105 Turn-Off Delay Time td(off) 45 68 Fall Time tf 27 41 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 18 30 Rise Time tr 15 25 Turn-Off Delay Time td(off) 52 80 Fall Time tf 14 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 5.8 A Pulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 10 A, VGS = 0 V - 0.78 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 35 53 ns Body Diode Reverse Recovery Charge Qrr 25 38 nC Reverse Recovery Fall Time ta 19 ns Reverse Recovery Rise Time tb 16 |
类似零件编号 - SI4491EDY |
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类似说明 - SI4491EDY |
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