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SI4491EDY 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI4491EDY
功能描述  P-Channel 30 V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI4491EDY 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
Vishay Siliconix
Si4491EDY
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 24
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 1.2
- 2.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 150
µA
VDS = 0 V, VGS = ± 20 V
± 15
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS - 10 V, ID = - 13 A
0.0054
0.0065
VGS - 6 V, ID = - 10 A
0.0068
0.0082
VGS - 4.5 V, ID = - 8 A
0.0093
0.0112
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 13 A
44
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
4620
pF
Output Capacitance
Coss
880
Reverse Transfer Capacitance
Crss
820
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A
102
153
nC
VDS = - 15 V, VGS = - 5 V, ID = - 17.3 A
66
80
Gate-Source Charge
Qgs
16
Gate-Drain Charge
Qgd
28
Gate Resistance
Rg
f = 1 MHz
0.3
1.3
2.6
Turn-On Delay Time
td(on)
VDD = 0 V, RL = 1.5 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
70
105
ns
Rise Time
tr
70
105
Turn-Off Delay Time
td(off)
45
68
Fall Time
tf
27
41
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
18
30
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
52
80
Fall Time
tf
14
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 5.8
A
Pulse Diode Forward Current
ISM
- 60
Body Diode Voltage
VSD
IS = - 10 A, VGS = 0 V
- 0.78
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
35
53
ns
Body Diode Reverse Recovery Charge
Qrr
25
38
nC
Reverse Recovery Fall Time
ta
19
ns
Reverse Recovery Rise Time
tb
16


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