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IRF740B 数据表(PDF) 2 Page - Vishay Siliconix |
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IRF740B 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 8 page IRF740B www.vishay.com Vishay Siliconix S16-0799-Rev. B, 02-May-16 2 Document Number: 91519 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.85 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 400 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA -0.53 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 1 μA VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5 A - 0.5 0.6 Forward Transconductance gfs VDS = 50 V, ID = 5 A - 2.7 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 526 - pF Output Capacitance Coss -59 - Reverse Transfer Capacitance Crss -9 - Effective Output Capacitance, Energy Related a Co(er) VGS = 0 V, VDS = 0 V to 320 V -66 - Effective Output Capacitance, Time Related b Co(tr) -84 - Total Gate Charge Qg VGS = 10 V ID = 5 A, VDS = 320 V -15 30 nC Gate-Source Charge Qgs -4 - Gate-Drain Charge Qgd -7 - Turn-On Delay Time td(on) VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 -12 24 ns Rise Time tr -18 36 Turn-Off Delay Time td(off) -18 36 Fall Time tf -14 28 Gate Input Resistance Rg f = 1 MHz, open drain 0.9 1.8 3.6 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 10 A Pulsed Diode Forward Current ISM -- 40 Diode Forward Voltage VSD TJ = 25 °C, IS = 5 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 5 A, dI/dt = 100 A/μs, VR = 25 V - 230 - ns Reverse Recovery Charge Qrr -1.6 - μC Reverse Recovery Current IRRM -14 - A S D G |
类似零件编号 - IRF740B |
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类似说明 - IRF740B |
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