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SI7619DN 数据表(PDF) 1 Page - Vishay Siliconix |
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SI7619DN 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si7619DN New Product Document Number: 65533 S09-2269-Rev. A, 02-Nov-09 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET •100 % Rg Tested •100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PC - Load Switch - Battery Switch - Adaptor Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 81 °C/W. d. Based on TC = 25 °C. e. Package Limited. f. See Solder Profile ( www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) - 30 0.021 at VGS = - 10 V - 24e 15 nC 0.034 at VGS = - 4.5 V - 18.7 Ordering Information: Si7619DN-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK® 1212-8 Bottom View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 24e A TC = 70 °C - 23.8 TA = 25 °C - 10.5a, b TA = 70 °C - 8.3a, b Pulsed Drain Current IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 23.2 TA = 25 °C - 2.9a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 27.8 W TC = 70 °C 17.8 TA = 25 °C 3.5a, b TA = 70 °C 2.2a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)f, g 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 29 36 °C/W Maximum Junction-to-Case Steady State RthJC 3.6 4.5 |
类似零件编号 - SI7619DN |
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类似说明 - SI7619DN |
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