SI7431DP datasheet(2/12 Pages) VISHAY

部件名	SI7431DP

功能描述	P-Channel 200 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 73116

S10-2246-Rev. E, 04-Oct-10

Vishay Siliconix

Si7431DP

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

- 4.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

- 1

µA

VDS = - 200 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 10 V, VGS = - 10 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 3.8 A

0.145

0.174



VGS = - 6 V, ID = - 3.6 A

0.147

0.180

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 3.8 A

17

S

Diode Forward Voltagea

VSD

IS = - 4.2 A, VGS = 0 V

- 0.78

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 75 V, VGS = - 10 V, ID = - 5.2 A

88

135

nC

Gate-Source Charge

Qgs

16.5

Gate-Drain Charge

Qgd

25

Gate Resistance

Rg

1.534.5



Turn-On Delay Time

td(on)

VDD = - 75 V, RL = 15.5 

ID  - 4.8 A, VGEN = - 10 V, Rg = 6 

23

40

ns

Rise Time

tr

49

75

Turn-Off Delay Time

td(off)

110

180

Fall Time

tf

66

100

Source-Drain Reverse Recovery Time

trr

IF = - 2.9 A, dI/dt = 100 A/µs

75

120

Output Characteristics

0

5

10

15

20

25

30

35

40

0

2468

10

VGS = 10 V thru 5 V

VDS - Drain-to-Source Voltage (V)

4 V

Transfer Characteristics

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

类似零件编号 - SI7431DP

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7431DP-T1-GE3	177Kb / 8P	P-Channel 200 V (D-S) MOSFET Rev. E, 04-Oct-10
	SI7431DP_RC	108Kb / 3P	R-C Thermal Model Parameters Revision: 05-Oct-07
	SI7431DP	329Kb / 12P	P-Channel 200 V (D-S) MOSFET 01-Jan-2022

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