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SI3476DV 数据表(PDF) 1 Page - Vishay Siliconix |
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SI3476DV 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si3476DV Document Number: 62884 S13-1818-Rev. A, 12-Aug-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 80 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Applications • LED Backlight Switch • DC/DC Converter • Boost Converter Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) 80 0.093 at VGS = 10 V 4.6 2.6 0.108 at VGS = 6 V 4.3 0.126 at VGS = 4.5 V 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.6 A TC = 70 °C 3.7 TA = 25 °C 3.5b,c TA = 70 °C 2.8b,c Pulsed Drain Current (t = 100 µs) IDM 18 Continuous Source-Drain Diode Current TC = 25 °C IS 3 A TA = 25 °C 1.7b,c Maximum Power Dissipation TC = 25 °C PD 3.6 W TC = 70 °C 2.3 TA = 25 °C 2b,c TA = 70 °C 1.3b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb,d t 5 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 28 35 Marking Code BG XX Lot Traceability and Date Code Part # Code TSOP-6 Top View 6 4 1 2 3 5 3 mm 2.85 mm D D D D S G N-Channel MOSFET G D S (1, 2, 5, 6) (3) (4) Ordering Information: Si3476DV-T1-GE3 (Lead (Pb)-free and Halogen-free) |
类似零件编号 - SI3476DV |
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类似说明 - SI3476DV |
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