SI1427EDH datasheet(4/12 Pages) VISHAY

部件名	SI1427EDH

功能描述	P-Channel 20 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 65526

S11-0453-Rev. B, 14-Mar-11

Vishay Siliconix

Si1427EDH

New Product

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

0

25

50

75

100

125

150

VGS =4.5 V,2.5 V;ID =3.2 A

VGS =1.8V;ID =1.5 A

TJ -Junction Temperature (°C)

VGS - Gate-to-Source Voltage (V)

0.00

0.03

0.06

0.09

0.12

0.15

0.18

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

ID = 3.2 A; TJ = 25 °C

ID =0.5 A; TJ =25 °C

ID = 3.2 A; TJ = 125 °C

ID =0.5 A; TJ = 125 °C

0

5

10

15

20

25

30

0.001

0.01

0.1

1

10

100

1000

Time (s)

Soure-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

0.01

0.1

1

10

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s

100 ms

Limited by R

DS(on)*

1 ms

T

Single Pulse

A = 25 °C

BVDSS Limited

10 ms

1 s

DC

类似零件编号 - SI1427EDH

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1427EDH	269Kb / 12P	P-Channel 20 V (D-S) MOSFET Rev. B, 14-Mar-11
	SI1427EDH	270Kb / 12P	P-Channel 20 V (D-S) MOSFET 09-Jul-2021
	SI1427EDH	270Kb / 12P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI1427EDH-T1-GE3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1427EDH-T1-GE3	270Kb / 12P	P-Channel 20 V (D-S) MOSFET 09-Jul-2021

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类似说明 - SI1427EDH

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