STD5406NT4G datasheet(3/6 Pages) ONSEMI

部件名	STD5406NT4G

功能描述	Power MOSFET

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制造商	ONSEMI [ON Semiconductor]

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NTD5406N, STD5406N

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TYPICAL PERFORMANCE CURVES

TJ = 100°C

02

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

Figure 1. On−Region Characteristics

3

20

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

2

1

0.8

0.6

50

175

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

TJ = −55°C

75

TJ = 25°C

ID = 10 A

VGS = 10 V

TJ = 25°C

VGS = 10 V

1

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 100°C

4 V

3.8 V

VGS = 5 V

VDS ≥ 10 V

10

18

3.6 V

4

20

80

VGS = 7 V to 10 V

40

125

100

5

10

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.01

0.015

0.02

0.03

36

0.005

4

0.012

0.004

0.008

0.006

0.010

10000

610

12

20

30

40

1.8

12

4

4.8 V

0.025

8

60

50

40

60

ID = 30 A

TJ = 25°C

100

16

14

2

8

4.4 V

7

59

0.014

0.016

0.018

10

1.6

1.4

1.2

150

13

7

59

20

4.2 V

8

67

0

80

50

70

4.6 V

0.020

46

8

60

70

30

10

50

5 V

6 V

10

30

1000

10

TJ = 175°C

类似零件编号 - STD5406NT4G

制造商	部件名	数据表	功能描述
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	STD5407NT4G	82Kb / 6P	Power MOSFET October, 2016 ??Rev. 7
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