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SS2PH5 数据表(PDF) 1 Page - Vishay Siliconix |
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SS2PH5 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SS2PH5, SS2PH6 www.vishay.com Vishay General Semiconductor Revision: 28-Jan-15 1 Document Number: 87741 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection in commercial, industrial, and automotive applications FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end Note (1) Free air, mounted on recommended copper pad area Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V, 60 V IFSM 50 A VF at IF = 2.0 A (TA = 125 °C) 0.59 V TJ max. 175 °C Package DO-220AA (SMP) Diode variations Single die DO-220AA (SMP) eSMP ® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2PH5 SS2PH6 UNIT Device marking code 2H5 2H6 Maximum repetitive peak reverse voltage VRRM 50 60 V Maximum average forward rectified current (fig. 1) IF(AV) (1) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Operating junction and storage temperature range TJ, TSTG -55 to +175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage IF = 1.0 A TA = 25 °C VF (1) 0.63 - V IF = 2.0 A 0.72 0.80 IF = 1.0 A TA = 125 °C 0.52 - IF = 2.0 A 0.59 0.70 Reverse current at rated VR TA = 25 °C IR (2) 0.2 2.0 μA TA = 125 °C 0.13 1.0 mA Typical junction capacitance 4.0 V, 1 MHz CJ 93 - pF |
类似零件编号 - SS2PH5 |
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类似说明 - SS2PH5 |
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