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1N4448WS-G 数据表(PDF) 2 Page - Vishay Siliconix |
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1N4448WS-G 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 1N4448WS-G www.vishay.com Vishay Semiconductors Rev. 1.2, 14-Oct-16 2 Document Number: 85414 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Characteristics Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature Fig. 4 - Relative Capacitance vs. Reverse Voltage Fig. 5 - Leakage Current vs. Junction Temperature 18105 VF (V) T j = 100 °C T j = 25 °C 10- 2 10- 1 102 103 1 10 12 0 17438 f = 1 kHz T j = 25 °C IF (mA) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 0 50 100 150 200 250 0 50 100 150 200 20324 T amb - Ambient Temperature (°C) 17440 VR (V) 0.7 0.8 0.9 1.0 1.1 f = 1 MHz T j = 25 °C 2 08 6 410 17441 Tj (°C) 10 102 103 104 100 200 2 5 2 5 2 5 2 5 V R = 20 V 1 0 |
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