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1N4151W-G 数据表(PDF) 3 Page - Vishay Siliconix |
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1N4151W-G 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page 1N4151W-G www.vishay.com Vishay Semiconductors Rev. 1.0, 08-May-13 3 Document Number: 85408 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration 1 18744 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) =50 V VR ν /T T = 1/f =t pp I FRM t p T t I ν =0 0. 1 0. 2 0. 5 10 10 1 -1 100 10 1 -5 10 10 -4 10 -3 10 -2 18709 tp -Pulse Length (s) |
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