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MC10EP11DR2 数据表(PDF) 5 Page - ON Semiconductor |
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MC10EP11DR2 数据表(HTML) 5 Page - ON Semiconductor |
5 / 8 page MC10EP11, MC100EP11 http://onsemi.com 5 AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 21) −40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 2) > 3 > 3 > 3 GHz tPLH, tPHL Propagation Delay to Output Differential CLK to Q, Q 140 200 250 160 220 270 180 240 300 ps tSKEW Within Device Skew Q0, Q1 (Note 22) Device−to−Device Skew 10 15 110 15 20 110 20 25 120 ps tJITTER Random Clock Jitter (RMS) (See Figure 2) 0.2 < 1 0.2 < 1 0.2 < 1 ps VINPP Input Voltage Swing Sensitivity (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times Q, Q (20% − 80%) @ 1.0 GHz 70 120 170 80 130 180 90 150 200 ps 21. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. 22. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. 0 100 200 300 400 500 600 700 800 900 0 1000 2000 3000 1 2 3 4 5 6 7 8 9 Figure 2. Output Voltage Amplitude (VOUTPP) RMS Jitter vs. Input Clock Frequency at Ambient Temperature INPUT FREQUENCY (MHz) |
类似零件编号 - MC10EP11DR2 |
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类似说明 - MC10EP11DR2 |
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