SI8481DB datasheet(4/7 Pages) VISHAY

部件名	SI8481DB

功能描述	P-Channel 20 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si8481DB

www.vishay.com

Vishay Siliconix

S16-2380-Rev. A, 21-Nov-16

4

Document Number: 75264

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

10

100

1000

10000

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

Axis Title

V

SD - Source-to-Drain Voltage (V)

2nd line

T

J = 150 °C

T

J = 25 °C

10

100

1000

10000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-50

-25

0

255075

100

125

150

Axis Title

T

J - Temperature (°C)

2nd line

I

D = 250 μA

10

100

1000

10000

0

0.01

0.02

0.03

0.04

012345

Axis Title

V

GS - Gate-to-Source Voltage (V)

2nd line

T

J = 25 °C

T

J = 150 °C

I

D = 3 A

0.001

0

40

80

60

Time (s)

20

0.01

0.1

1

10

100

600

10

100

1000

10000

0.01

0.1

1

10

100

0.1

1

10

100

Axis Title

V

DS - Drain-to-Source Voltage (V)

(1) V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)

(1)

T

A = 25 °C

Single pulse

100 ms

10 ms

1 ms

100 μs

1s

10 s

DC

类似零件编号 - SI8481DB

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI8481DB	179Kb / 8P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI8481DB	179Kb / 8P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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