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BA159 数据表(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BA159 数据表(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces ,0.34 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. BA159D BA159 UNITS Maximum recurrent peak reverse voltage VRRM 800 1000 V Maximum RMS voltage VRMS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG N OTE: 1.Measured with I F=0. 5A, I R=1A, Irr=0. 25A. 3.Therm al resistance f rom junction to am bient. The plas tic m aterial carries U/L recognition 94V-0 DO - 41 5.0 100.0 1.3 300 IR 30.0 VOLTAGE RANGE: 400 --- 1000 V CURRENT: 1.0 A 600 BA158 1.0 A FAST RECOVERY RECT IFIERS IF(AV) 2.Measured at 1.0MH z and applied rev erse v oltage of 4.0V D C . - 55---- +125 - 55---- + 150 12 A IFSM A 55 BA157(Z)---BA159(Z) GALAXY ELECTRICAL 400 280 400 BA157 Eas ily cleaned with Freon,Alcohol,Is opropanol 600 420 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 1561135 1. Dimensions in millimeters |
类似零件编号 - BA159 |
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类似说明 - BA159 |
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