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FDS6990 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDS6990 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page May 2001 ©2001 Fairchild Semiconductor Corporation FDS6990S Rev B(W) FDS6990S Dual 30V N-Channel PowerTrench ® SyncFET™ General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode. Applications • DC/DC converter • Motor drives Features • 7.5A, 30 V. RDS(ON) = 22 m Ω @ V GS = 10 V RDS(ON) = 30 m Ω @ V GS = 4.5 V • Includes SyncFET Schottky diode • Low gate charge (11 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 5 3 6 2 7 1 8 Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990S FDS6990S 13’’ 12mm 2500 units |
类似零件编号 - FDS6990 |
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类似说明 - FDS6990 |
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