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BAT54L 数据表(PDF) 2 Page - ON Semiconductor |
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BAT54L 数据表(HTML) 2 Page - ON Semiconductor |
2 / 4 page BAT54L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 μA) V(BR)R 30 − − Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 μAdc Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 V Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr − − 5.0 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2 k 820 Ω 0.1 μF DUT VR 100 μH 0.1 μF 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE tr tp T 10% 90% IF IR trr T iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
类似零件编号 - BAT54L |
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类似说明 - BAT54L |
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