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IRF7492 数据表(PDF) 1 Page - International Rectifier |
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IRF7492 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 IRF7492 HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Parameter Max. Units VDS Drain-Source Voltage 200 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.0 A IDM Pulsed Drain Current 30 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 9.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings Notes through are on page 8 PD - 94498 SO-8 T op V iew 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max ID 200V 79 m Ω Ω Ω Ω Ω@V GS = 10V 3.7A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 Thermal Resistance 06/27/02 °C/W |
类似零件编号 - IRF7492 |
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类似说明 - IRF7492 |
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