BTB06 datasheet(1/1 Pages) ISC

部件名	BTB06

功能描述	isc Triacs

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Triacs

BTB06 T/D/S/A

FEATURES

·

With TO-220AB non insulated package

·

Suitables for general purpose applications where gate high sensitivity is

required. application on 4Q such as phase control and static switching.

·

Minimum Lot-to-Lot variations for robust device performance and reliable

operation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

IT(RMS)

RMS on-state current (full sine wave)Tj=90℃

6

A

ITSM

Non-repetitive peak on-state current tp=10ms

60

A

Tj

Operating junction temperature

110

℃

Tstg

Storage temperature

-45~150

℃

Rth(j-c)

Thermal resistance, junction to case

3.2

℃

/W

Rth(j-a)

Thermal resistance, junction to ambient

60

℃

/W

SYMBOL

PARAMETER

400T/D/S/A

600T/D/S/A

700T/D/S/A

UNIT

VDRM

Repetitive peak off-state voltage

400

600

700

V

VRRM

Repetitive peak reverse voltage

400

600

700

V

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM,

VR=VRRM, Tj=110℃

0.01

0.75

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=110℃

0.01

0.75

mA

IGT

Gate trigger current

Ⅰ

-Ⅱ-Ⅲ

VD=12V; RL= 33Ω

T

D

S

A

mA

5

10

Ⅳ

5

10

25

IH

Holding current

IGT= 0.1A, Gate Open

15

25

mA

VGT

Gate trigger voltage all quadrant VD=12V; RL= 30Ω

1.5

V

VTM

On-state voltage

IT= 8.5A

1.65

V

类似零件编号 - BTB06

制造商	部件名	数据表	功能描述
STMicroelectronics	BTB06	69Kb / 5P	SENSITIVE GATE TRIACS
Sirectifier Semiconduct...	BTB06	341Kb / 4P	Discrete Triacs(Non-Isolated/Isolated)
Suntac Electronic Corp.	BTB06	72Kb / 4P	6A TRIACS
Sirectifier Global Corp...	BTB06	1Mb / 4P	Discrete Triacs(Non-Isolated/Isolated)
JIEJIE MICROELECTRONICS...	BTB06	578Kb / 5P	6A TRIACs

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