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TPCS8209 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8209 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCS8209 2002-01-17 3 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −12 V 8 V Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5 1.2 V VGS = 2.0 V, ID = 3.5 A 34 60 VGS = 2.5 V, ID = 3.5 A 26 40 Drain-source ON resistance RDS (ON) VGS = 4.0 V, ID = 4.0 A 19 30 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 4.6 9.2 S Input capacitance Ciss 1280 Reverse transfer capacitance Crss 130 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 150 pF Rise time tr 4.5 Turn-ON time ton 11 Fall time tf 7.3 Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs 33 ns Total gate charge (gate-source plus gate-drain) Qg 15 Gate-source charge 1 Qgs1 3.3 Gate-drain (“miller”) charge Qgd VDD ∼− 16 V, VGS = 5 V, ID = 5 A 3.5 nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V −1.2 V VDD ∼− 10 V 0 V VGS 5 V ID = 2.5 A VOUT |
类似零件编号 - TPCS8209 |
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类似说明 - TPCS8209 |
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