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SD197-121-041 数据表(PDF) 2 Page - List of Unclassifed Manufacturers |
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SD197-121-041 数据表(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 2 page InGaAs Photodiode SD197-121-041 WWW.LUNAINC.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 02-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 100 µA 10 - - V Responsivity λ= 600 nm 0.3 0.35 - A/W Responsivity λ= 1200 nm 0.8 .85 - A/W Responsivity λ= 1550 nm 0.9 1.00 - nA Shunt Resistance Vbias = 10 mV 0.2 0.8 - M Ω Capacitance Vbias = 0V; f = 1 MHz - 1 5 pF Rise Time (50 Ω load) Vbias = 1V; λ= 826 nm - 5 - ns Noise Equivalent Power λ= 900 nm - 9.6 - 10 -13W/Hz0.5 TYPICAL PERFORMANCE SPECTRAL RESPONSE 0 0.2 0.4 0.6 0.8 1 1.2 400 600 800 1000 1200 1400 1600 1800 Wavelenght, nm |
类似零件编号 - SD197-121-041 |
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类似说明 - SD197-121-041 |
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