Si4460-C datasheet(4/53 Pages) SILABS

部件名	Si4460-C

功能描述	HIGH-PERFORMANCE

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制造商	SILABS [Silicon Laboratories]

网页	http://www.silabs.com

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4 / 53 page

Si4463/61/60-C

4

Rev 1.0

1. Electrical Specifications

Table 1. DC Characteristics1

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Supply Voltage

Range

VDD

1.8

3.3

3.8

V

Power Saving Modes IShutdown

RC Oscillator, Main Digital Regulator,

and Low Power Digital Regulator OFF

—

30

1300

nA

IStandby

Register values maintained and RC

oscillator/WUT OFF

—

40

2900

nA

ISleepRC RC Oscillator/WUT ON and all register values main-

tained, and all other blocks OFF

—

740 3800

nA

ISleepXO

Sleep current using an external 32 kHz crystal

—

1.7

—

µA

ISensor

-LBD

Low battery detector ON, register values maintained,

and all other blocks OFF

—1—

µA

IReady

Crystal Oscillator and Main Digital Regulator ON,

all other blocks OFF

—1.8

—

mA

Preamble Sense

Mode Current

Ipsm

Duty cycling during preamble search,

1.2 kbps, 4 byte preamble

—6—

mA

Ipsm

Fixed 1 s wakeup interval, 50 kbps, 5 byte preamble

—

10

—

µA

TUNE Mode Current

ITune_RX

RX Tune, High Performance Mode

—

7.6

—

mA

ITune_TX

TX Tune, High Performance Mode

—

7.8

—

mA

RX Mode Current

IRXH

High Performance Mode

(measured at 915 MHz and 40 kbps data rate)

—13.7

22

mA

IRXL

Low Power Mode

(measured at 315 MHz and 40 kbps data rate)

—10.9—

mA

TX Mode Current

(Si4463)

ITX_+20

+20 dBm output power, Class-E match,

915 MHz, 3.3 V

—88

108

mA

+20 dBm output power, square-wave match,

169 MHz, 3.3 V

—68.5

80

mA

+13 dBm output power, Class-E match,

915 MHz, 3.3 V

—44.5

60

mA

TX Mode Current

(Si4460)

ITX_+10

+10 dBm output power, Class-E match,

915/868 MHz, 3.3 V2

—19.7—

mA

ITX_+10

+10 dBm output power, Class-E match,

169 MHz, 3.3 V2

—18—

mA

ITX_+13

+13 dBm output power, Class-E match,

915/868 MHz, 3.3 V

—24—

mA

TX Mode Current

(Si4461)

ITX_+16

+16 dBm output power, class-E match,

868 MHz, 3.3 V

—43

55

mA

ITX_+13

+13 dBm output power, switched-current match,

868 MHz, 3.3 V

—33.5

40

mA

Notes:

1.

All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage and

from –40 to +85 °C unless otherwise stated. All typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated.

2.

Measured on direct-tie RF evaluation board.

类似零件编号 - Si4460-C

制造商	部件名	数据表	功能描述
Silicon Laboratories	SI4460-C2A-GM	1Mb / 53P	HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER
Silicon Laboratories	SI4460-C2A-GM	1Mb / 53P	HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER Rev 1.0 10/14

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