© Semiconductor Components Industries, LLC, 1994

November, 2016 − Rev. 6

1

Publication Order Number:

BCW65ALT1/D

BCW65ALT1G,

BCW65CLT1G

General Purpose Transistor

NPN Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

32

Vdc

Collector − Base Voltage

60

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

Ex

= Device Code

x = A or C

M

= Date Code*

G

= Pb−Free Package

MARKING DIAGRAMS

1

2

3

Device

Package

ORDERING INFORMATION

BCW65ALT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Ex M

G

G

COLLECTOR

3

1

BASE

2

EMITTER

BCW65CLT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

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