2SK3389

2002-03-04

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3389

Switching Regulator, DC-DC Converter Applications

Motor Drive Applications

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±30

V

DC

(Note 1)

75

Drain current

Pulse

(Note 1)

300

A

Drain power dissipation

125

W

Single pulse avalanche energy

(Note 2)

731

mJ

Avalanche current

75

A

Repetitive avalanche energy (Note 3)

12.5

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.00

°C/W

Note 1: Please use devices on condition that the channel temperature

is below 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-97

TOSHIBA

2-9F1B

Weight: 0.74 g (typ.)

Notice:

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into S2 pin.

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