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TPCS8212 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TPCS8212 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCS8212 2002-01-17 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) • Common drain Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 6 Drain current Pulse (Note 1) IDP 24 A Single-device operation (Note 3a) PD (1) 1.1 Drain power dissipation (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 0.75 Single-device operation (Note 3a) PD (1) 0.6 Drain power dissipation (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.35 W Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 |
类似零件编号 - TPCS8212 |
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类似说明 - TPCS8212 |
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